Piezoelectric effect in elongated „In,Ga...As islands on GaAs„100..
نویسندگان
چکیده
The piezoelectric ~PZ! effect is demonstrated for the elongated three-dimensional ~In,Ga!As islands grown on a GaAs ~100! substrate. The photoluminescence ~PL! spectrum is studied as a function of excitation intensity. With increasing excitation intensity, a blue shift and a linewidth reduction of the PL peak from the ~In,Ga!As islands are observed. The observed phenomena are attributed to the screening of the internal straininduced PZ field in the ~In,Ga!As islands.
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